Gate-controlled linear magnetoresistance in thin Bi2Se3 sheets

Gao, B. F.; Gehring, P.; Burghard, M.; Kern, K.

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Gate-controlled linear magnetoresistance in thin Bi₂Se₃ sheets

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Burghard, M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Kern, K.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Gao, B. F., Gehring, P., Burghard, M., & Kern, K. (2012). Gate-controlled linear magnetoresistance in thin Bi₂Se₃ sheets. Applied Physics Letters, 100(21): 212402.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C207-F

Abstract

We explore the emergence of linear magnetoresistance in thin Bi2Se3 sheets upon tuning the carrier density using a back gate. With increasingly negative gate voltage, a pronounced magnetoresistance of similar to 100% is observed, while the associated B-field dependence changes from quadratic to linear. Concomitantly, the resistance-versus-temperature curves evolve from metallic to semiconductor-like, and increasingly strong weak anti-localization behavior is manifested. Analysis of the magnetoresistance data reveals two contributions, namely from the bulk conduction band and from a state inside the bulk gap. The latter is responsible for the linear magnetoresistance and likely represents the topologically protected surface state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4719196]