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Journal Article

Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy

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Burghard,  M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Kern,  K.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Gehring, P., Gao, B. F., Burghard, M., & Kern, K. (2012). Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy. Nano Letters, 12(10), 5137-5142.


Cite as: https://hdl.handle.net/21.11116/0000-000E-C35D-E
Abstract
The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice defects. As exemplified by the topological insulator Bi2Te2Se, we show that via van der Waals epitaidal growth on thin hBN substrates the structural quality of such nanoplatelets can be substantially improved. The surface state carrier mobility of nanoplatelets on hBN is increased by a factor of about 3 compared to platelets on conventional Si/SiOx substrates, which enables the observation of well-developed Shubnikov-de Haas oscillations. We furthermore demonstrate the possibility to effectively tune the Fermi level position in the films with the aid of a back gate.