Influence of the atomic-scale structure on the exciton fine-structure splitting 
in InGaAs and GaAs quantum dots in a vertical electric field

Luo, J. W.; Singh, R.; Zunger, A.; Bester, G.

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Influence of the atomic-scale structure on the exciton fine-structure splitting in InGaAs and GaAs quantum dots in a vertical electric field

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Singh, R.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Former Research Groups, Max Planck Institute for Solid State Research, Max Planck Society;

Bester, G.
Max Planck Society;

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Citation

Luo, J. W., Singh, R., Zunger, A., & Bester, G. (2012). Influence of the atomic-scale structure on the exciton fine-structure splitting in InGaAs and GaAs quantum dots in a vertical electric field. Physical Review B, 86(16): 161302.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C311-2

Abstract

We investigate the vertical electric field tuning of the exciton fine-structure splitting (FSS) in several InGaAs and GaAs quantum dots (QDs) using the atomistic empirical pseudopotential approach and configuration interaction. We find that the FSS is surprisingly tunable, with a rate similar to the one reported for lateral electric fields. The minimum FSS for GaAs QDs often lies below the radiative linewidth, which makes them good candidates for the generation of entangled photon pairs. We highlight, however, that random alloy fluctuations affect the minimum FSS by +/- 1.4 mu eV, so that a postselection of QDs may still be beneficial to obtain entangled photon pairs with the highest fidelity. We suggest a simple experimental procedure for this task. The FSS is therefore a rare observable, where the specific decoration of the random alloy lattice matters significantly.