Large negative electronic compressibility of LaAlO3-SrTiO3 interfaces with 
ultrathin LaAlO3 layers

Tinkl, V.; Breitschaft, M.; Richter, C.; Mannhart, J.

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Large negative electronic compressibility of LaAlO₃-SrTiO₃ interfaces with ultrathin LaAlO₃ layers

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Mannhart, J.
Department Solid State Quantum Electronics (Jochen Mannhart), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Tinkl, V., Breitschaft, M., Richter, C., & Mannhart, J. (2012). Large negative electronic compressibility of LaAlO₃-SrTiO₃ interfaces with ultrathin LaAlO₃ layers. Physical Review B, 86(7): 075116.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C25E-E

Abstract

A two-dimensional electron liquid is formed at the n-type interface between SrTiO3 and LaAlO3. Here we report on Kelvin probe microscopy measurements of the electronic compressibility of this electron system. The electronic compressibility is found to be negative for carrier densities of approximate to 10(13)/cm(2). At even smaller densities, a metal-to-insulator transition occurs. These local measurements corroborate earlier measurements of the electronic compressibility of LaAlO3-SrTiO3 interfaces obtained by measuring the capacitance of macroscopic metal-LaAlO3-SrTiO3 capacitors.