Lutetium-doped EuO films grown by molecular-beam epitaxy

Melville, A.; Mairoser, T.; Schmehl, A.; Shai, D. E.; Monkman, E. J.; Harter, J. W.; Heeg, T.; Holländer, B.; Schubert, J.; Shen, K. M.; Mannhart, J.; Schlom, D. G.

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Lutetium-doped EuO films grown by molecular-beam epitaxy

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Mannhart, J.
Department Solid State Quantum Electronics (Jochen Mannhart), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Melville, A., Mairoser, T., Schmehl, A., Shai, D. E., Monkman, E. J., Harter, J. W., et al. (2012). Lutetium-doped EuO films grown by molecular-beam epitaxy. Applied Physics Letters, 100(22): 222101.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C21E-6

Abstract

The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite non-magnetic carriers introduced by 5% lutetium doping. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723570]