Magnetic domain pattern asymmetry in (Ga, Mn)As/(Ga, In)As with in-plane 
anisotropy

Herrera Diez, L.; Rapp, C.; Schoch, W.; Limmer, W.; Gourdon, C.; Jeudy, V.; Honolka, J.; Kern, K.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Magnetic domain pattern asymmetry in (Ga, Mn)As/(Ga, In)As with in-plane anisotropy

MPS-Authors

/persons/resource/persons280068

Honolka, J.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280131

Kern, K.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Herrera Diez, L., Rapp, C., Schoch, W., Limmer, W., Gourdon, C., Jeudy, V., et al. (2012). Magnetic domain pattern asymmetry in (Ga, Mn)As/(Ga, In)As with in-plane anisotropy. Journal of Applied Physics, 111(8): 083908.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C21A-A

Abstract

Appropriate adjustment of the tensile strain in (Ga, Mn)As/(Ga,In)As films allows for the coexistence of in-plane magnetic anisotropy, typical of compressively strained (Ga, Mn)As/GaAs films, and the so-called cross-hatch dislocation pattern seeded at the (Ga, In) As/GaAs interface. Kerr microscopy reveals a close correlation between the in-plane magnetic domain and dislocation patterns, absent in compressively strained materials. Moreover, the magnetic domain pattern presents a strong asymmetry in the size and number of domains for applied fields along the easy [1 (1) over bar0] and hard [110] directions which is attributed to different domain wall nucleation/propagation energies. This strong influence of the dislocation lines in the domain wall propagation/nucleation provides a lithography-free route to the effective trapping of domain walls in magneto-transport devices based on (Ga, Mn) As with in-plane anisotropy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704385]