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Journal Article

Ultra-thin titanium oxide

MPS-Authors
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Lotsch,  B. V.
Department Nanochemistry (Bettina V. Lotsch), Max Planck Institute for Solid State Research, Max Planck Society;

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Zschieschang,  U.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Klauk,  H.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Bareiß, M., Kälblein, D., Jirauschek, C., Exner, A., Pavlichenko, I., Lotsch, B. V., et al. (2012). Ultra-thin titanium oxide. Applied Physics Letters, 101(8): 083113.


Cite as: https://hdl.handle.net/21.11116/0000-000E-C323-E
Abstract
We demonstrate the fabrication of ultra-thin titanium oxide films by plasma-induced surface oxidation. Ellipsometry measurements indicate an oxide thickness of about 2 nm. Electrical characterization was performed on microscale and nanoscale metal-insulator-metal tunneling diodes. Electrical fields up to 22 MV/cm were applied without destroying the titanium oxide films. The current-voltage-characteristic of the diodes are found to be asymmetric with respect to zero bias when employing electrodes with different work functions. The permittivity of the ultra-thin titanium oxide was determined to be less than 6, which is the smallest permittivity that has been reported for titanium oxide. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745651]