Variable range hopping in graphene antidot lattices

Peters, E. C.; Giesbers, A. J. M.; Burghard, M.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Variable range hopping in graphene antidot lattices

MPS-Authors

/persons/resource/persons279819

Burghard, M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Peters, E. C., Giesbers, A. J. M., & Burghard, M. (2012). Variable range hopping in graphene antidot lattices. physica status solidi (b), 249(12), 2522-2525.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C339-6

Abstract

We investigate the low temperature electrical transport mechanism in graphene antidot lattices. While the antidot diameter is kept constant at 50?nm, the center-to-center spacing between the antidots is varied from 80 to 200?nm in cubic arrangement. Our temperature dependent charge transport data reveal that electrical conduction in the samples is governed by variable range hopping (VRH) between localized states within a band gap. Upon decreasing the nanohole spacing the localization becomes stronger and the transport mechanism changes from 2D Mott VRH to EfrosShklovskii (ES VRH). Concomitantly, a soft gap emerges due to the stronger localization and the increased Coulomb interactions between the localized states, which are most likely located at the nanohole edges. The Coulomb gap (CG) decreases linearly with increasing charge carrier density. Stronger localization with an increased CG is observed for thermally annealed samples with reduced doping. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim