Single Crystal Growth and Transport Properties of Cu-doped Topological 
Insulator Bi2Se3

Li, Z. J.; Liu, Y.; White, S. C.; Wahl, P.; Xie, X. M.; Jiang, M. H.; Lin, C. T.

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Single Crystal Growth and Transport Properties of Cu-doped Topological Insulator Bi₂Se₃

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Wahl, P.
Former Research Groups, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Lin, C. T.
Scientific Facility Crystal Growth (Masahiko Isobe), Max Planck Institute for Solid State Research, Max Planck Society;

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Li, Z. J., Liu, Y., White, S. C., Wahl, P., Xie, X. M., Jiang, M. H., et al. (2012). Single Crystal Growth and Transport Properties of Cu-doped Topological Insulator Bi₂Se₃. Physics Procedia, 36, 638-643.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C1C1-D

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