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Electron g-factor anisotropy in GaAs/Al1-xGaxAs quantum wells of different symmetry

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Kukushkin,  I. V.
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Dietsche,  W.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Nefyodov, Y. A., Shchepetilnikov, A. V., Kukushkin, I. V., Dietsche, W., & Schmult, S. (2011). Electron g-factor anisotropy in GaAs/Al1-xGaxAs quantum wells of different symmetry. Physical Review B, 84(23): 233302.


Cite as: https://hdl.handle.net/21.11116/0000-000E-C0FB-E
Abstract
The anisotropy of the electron g factor is investigated in symmetrically (SQW) and asymmetrically (AQW) doped 20-nm GaAs/AlGaAs quantum wells, grown in the [001] direction. Applied was the electrically detected electron spin resonance technique. The AQW demonstrates strong twofold in-plane g-factor anisotropy with the [110] and [1 (1) over bar0] principal axes. This can be readily ascribed to the internal electric field asymmetry as caused by single-side doping. The SQW is shown to have 10 times as weak (but still detectable) anisotropy with the same principal axes. The linear (in the magnetic field) corrections to the g factor were also carefully measured. The a tensor of these corrections is shown to have at least three different nonzero components, namely, a(zzz), a(xxz), and a(yyz)