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g-factor anisotropy in a GaAs/AlxGa1-xAs quantum well probed by electron spin resonance

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Kukushkin,  I. V.
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Dietsche,  W.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Nefyodov, Y. A., Shchepetilnikov, A. V., Kukushkin, I. V., Dietsche, W., & Schmult, S. (2011). g-factor anisotropy in a GaAs/AlxGa1-xAs quantum well probed by electron spin resonance. Physical Review B, 83(4): 041307.


Cite as: https://hdl.handle.net/21.11116/0000-000E-BFDB-5
Abstract
The anisotropy of electron g-factor is investigated for several GaAs/Al(x)Ga(1-x)As heterostructures using an electrically detected electron spin resonance technique at liquid helium temperature. For a modulation-doped 25-nm single quantum well with electron density n = 4 x 10(11) cm(-2) we extracted an out-of-plane g-factor value of vertical bar g(zz)vertical bar = 0.410 and in-plane values of vertical bar g(yy)vertical bar = 0.359 and vertical bar g(xx)vertical bar = 0.289. In addition, linear in magnetic field corrections to the g-factor components were also extracted and strong anisotropy in their values was established.