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Quantum Hall Effect in Twisted Bilayer Graphene

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Lee,  D. S.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;

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Riedl,  C.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;

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von Klitzing,  K.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280552

Starke,  U.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;

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Smet,  J. H.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Lee, D. S., Riedl, C., Beringer, T., Castro Neto, A. H., von Klitzing, K., Starke, U., et al. (2011). Quantum Hall Effect in Twisted Bilayer Graphene. Physical Review Letters, 107(21): 216602.


Cite as: https://hdl.handle.net/21.11116/0000-000E-BEF9-4
Abstract
We address the quantum Hall behavior in twisted bilayer graphene transferred from the C face of SiC. The measured Hall conductivity exhibits the same plateau values as for a commensurate Bernal bilayer. This implies that the eightfold degeneracy of the zero energy mode is topologically protected despite rotational disorder as recently predicted. In addition, an anomaly appears. The densities at which these plateaus occur show a magnetic field dependent offset. It suggests the existence of a pool of localized states at low energy, which do not count towards the degeneracy of the lowest band Landau levels. These states originate from an inhomogeneous spatial variation of the interlayer coupling.