Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on 
Si(001)

Boioli, F.; Zinovyev, V. A.; Gatti, R.; Marzegalli, A.; Montalenti, F.; Stoffel, M.; Merdzhanova, T.; Wang, L.; Pezzoli, F.; Rastelli, A.; Schmidt, O. G.; Miglio, L.

Datensatz

DATENSATZ AKTIONENEXPORT

Zur Ablage hinzufügen

Lokale TagsFreigabegeschichteDetailsÜbersicht

Freigegeben

Zeitschriftenartikel

Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001)

MPG-Autoren

/persons/resource/persons280560

Stoffel, M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280299

Merdzhanova, T.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280638

Wang, L.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280417

Rastelli, A.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280485

Schmidt, O. G.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

Externe Ressourcen

Es sind keine externen Ressourcen hinterlegt

Volltexte (beschränkter Zugriff)

Für Ihren IP-Bereich sind aktuell keine Volltexte freigegeben.

Volltexte (frei zugänglich)

Es sind keine frei zugänglichen Volltexte in PuRe verfügbar

Ergänzendes Material (frei zugänglich)

Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar

Zitation

Boioli, F., Zinovyev, V. A., Gatti, R., Marzegalli, A., Montalenti, F., Stoffel, M., et al. (2011). Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001). Journal of Applied Physics, 110(4): 044310.

Zitierlink: https://hdl.handle.net/21.11116/0000-000E-BED3-E

Zusammenfassung

Ordering of misfit dislocation segments in concentric polygons at the base of SiGe epitaxial islands on Si(001) has been recently indicated by in situ Transmission Electron Microscope observation. In this paper we confirm the very regular spacing by Atomic Force Microscope and He-ion Microscope measurements of the footprint carved in the Si substrate by the plastic events. We explain the intriguing ordering, as obtained with no gliding rearrangements, by cyclic occurrence of the thermodynamic critical conditions for plastic events. Quantitative predictions by a fully analytical model, which includes the dependence on island shape and composition in the generation of misfit dislocations, matched very well experimental measurements. (C) 2011 American Institute of Physics. [doi:10.1063/1.3611385]