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Journal Article

Transverse laser induced thermoelectric voltage effect in tilted La0.5Sr0.5CoO3 thin films

MPS-Authors
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Wang,  Y.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Yu,  L.
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;

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Zhang,  P. X.
Scientific Facility Crystal Growth (Masahiko Isobe), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Wang, Y., Yu, L., & Zhang, P. X. (2011). Transverse laser induced thermoelectric voltage effect in tilted La0.5Sr0.5CoO3 thin films. Optics and Laser Technology, 43(8), 1462-1465.


Cite as: https://hdl.handle.net/21.11116/0000-000E-BE7D-1
Abstract
The transverse laser induced thermoelectric voltage effect has been investigated in tilted La(0.5)Sr(0.5)CoO(3) thin films grown on vicinal cut LaAlO(3) (1 0 0) substrates when films are irradiated by pulse laser at room temperature. The detected voltage signals are demonstrated to originate from the transverse Seebeck effect as the linear dependence of voltage on tilted angle in the range of small tilted angle. The Seebeck coefficient anisotropy Delta S of 0.03 mu V/K at room temperature is calculated and its distorted cubic structure is thought to be responsible for this. Films grown on a series of substrates with different tilted angles show the optimum angle of 19.8 degrees for the maximum voltage. Film thickness dependence of voltage has also been studied. Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.