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Journal Article

Effect of pressure on the second-order Raman scattering intensities of zincblende semiconductors

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Trallero-Giner,  C.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Syassen,  K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Solid State Quantum Electronics (Jochen Mannhart), Max Planck Institute for Solid State Research, Max Planck Society;

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Trallero-Giner, C., & Syassen, K. (2010). Effect of pressure on the second-order Raman scattering intensities of zincblende semiconductors. physica status solidi (b), 247(1), 182-188.


Cite as: https://hdl.handle.net/21.11116/0000-000E-BFC7-B
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