Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs 
Quantum Dots by Piezoelectric-Induced Biaxial Stress

Ding, F.; Singh, R.; Plumhof, J. D.; Zander, T.; Krapek, V.; Chen, Y. H.; Benyoucef, M.; Zwiller, V.; Dorr, K.; Bester, G.; Rastelli, A.; Schmidt, O. G.

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Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress

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Singh, R.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Former Research Groups, Max Planck Institute for Solid State Research, Max Planck Society;

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Zander, T.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Benyoucef, M.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

Bester, G.
Max Planck Society;

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Rastelli, A.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Ding, F., Singh, R., Plumhof, J. D., Zander, T., Krapek, V., Chen, Y. H., et al. (2010). Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress. Physical Review Letters, 104(6): 067405.

Cite as: https://hdl.handle.net/21.11116/0000-000E-BDBD-9

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