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Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors

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Kraft,  U.
Max Planck Institute for Solid State Research, Stuttgart, Germany;
Tech Univ Bergakad Freiberg, Freiberg, Germany;
Stanford Univ, Dept Elect Engn, Stanford, CA, USA;
Univ Cambridge, Cavendish Lab, Cambridge, England;
Lise Meitner Group Kraft: Organic Bioelectronics, MPI for Polymer Research, Max Planck Society;
Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society;

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Jansen,  M.
Abteilung Jansen, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Kern,  K.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Klauk,  H.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Kraft, U., Zschieschang, Z., Ante, F., Kälblein, D., Kamella, C., Amsharov, K., et al. (2010). Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors. Journal of Materials Chemistry, 20, 6416-6418.


Cite as: https://hdl.handle.net/21.11116/0000-000E-BD58-B
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