Thickness dependence of the terahertz response in (110)-oriented GaAs crystals 
for electro-optic sampling at 1.55 μm

Zhao, Z.; Schwagmann, A.; Ospald, F.; Driscoll, D. C.; Lu, H.; Gossard, A. C.; Smet, J. H.

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Thickness dependence of the terahertz response in (110)-oriented GaAs crystals for electro-optic sampling at 1.55 μm

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Smet, J. H.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;

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Zhao, Z., Schwagmann, A., Ospald, F., Driscoll, D. C., Lu, H., Gossard, A. C., et al. (2010). Thickness dependence of the terahertz response in (110)-oriented GaAs crystals for electro-optic sampling at 1.55 μm. Optics Express, 18, 15956-15963.

Cite as: https://hdl.handle.net/21.11116/0000-000E-BC5E-6

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