Hysteresis Effects by Source/Drain Interdigitated-Finger Geometry in 
6,13-Bis(triisopropylsilylethynyl)pentacene Thin-Film Transistors

Kwon, J. H.; Shin, S. I.; Choi, J.; Chung, M. H.; Ryu, H.; Zschieschang, U.; Klauk, H.; Anthony, J. E.; Ju, B. K.

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Hysteresis Effects by Source/Drain Interdigitated-Finger Geometry in 6,13-Bis(triisopropylsilylethynyl)pentacene Thin-Film Transistors

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Zschieschang, U.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Klauk, H.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Kwon, J. H., Shin, S. I., Choi, J., Chung, M. H., Ryu, H., Zschieschang, U., et al. (2009). Hysteresis Effects by Source/Drain Interdigitated-Finger Geometry in 6,13-Bis(triisopropylsilylethynyl)pentacene Thin-Film Transistors. Electrochemical and Solid-State Letters, 12(8), H285-H287.

Cite as: https://hdl.handle.net/21.11116/0000-000E-BBB9-F

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