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Effect of temperature on isotopic mass dependence of excitonic band gaps in semiconductors: ZnO

MPS-Authors
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Lu,  X.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Cardona,  M.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Lauck,  R.
Scientific Facility Crystal Growth (Masahiko Isobe), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Alawadhi, H., Tsoi, S., Lu, X., Ramdas, A. K., Grimsditch, M., Cardona, M., et al. (2007). Effect of temperature on isotopic mass dependence of excitonic band gaps in semiconductors: ZnO. Physical Review B, 75(20): 205207.


Cite as: https://hdl.handle.net/21.11116/0000-000E-B74F-C
Abstract
The temperature dependence of the A, B, and C excitons of ZnO, observed in modulated reflectivity spectra of (ZnO)-Zn-68-O-18 and (ZnO)-Zn-nat-O-nat in the range 10-400 K, reveal the superposition of band-gap renormalization originating in electron-phonon interaction and volume changes associated with thermal expansion and (or) isotopic composition in combination with anharmonicity. At low temperatures, the A, B, and C excitons in natural ZnO reach limiting values depressed from their values for the infinitely massive isotopes (the latter are free from electron-phonon interaction and anharmonicity). The C excitons of (ZnO)-Zn-68-O-18 and (ZnO)-Zn-nat-O-nat converge with increasing temperature, demonstrating the independence of the band gap from isotopic mass at high temperatures.