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From rolled-up Si microtubes to SiOx/Si optical ring resonators

MPS-Authors
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Songmuang,  R.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Rastelli,  A.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Mendach,  S.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Deneke,  C.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt,  O. G.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Songmuang, R., Rastelli, A., Mendach, S., Deneke, C., & Schmidt, O. G. (2007). From rolled-up Si microtubes to SiOx/Si optical ring resonators. Microelectronic Engineering, 84(5-8), 1427-1430.


Cite as: https://hdl.handle.net/21.11116/0000-000E-B7AB-3
Abstract
We present a fabrication technique to realize SiOx/Si optical ring resonators based on rolled-up Si microtubes. The strain gradient inside a partially strain-relaxed Si film on a relaxed Ge buffer is employed to roll up the released Si or SiOx/Si layers into microtubes by selectively etching away the Ge relaxed buffer. After annealing the SiOx/Si tubes at 850 degrees C, the hybrid microtubes emit light in the visible spectral range at room temperature. Optical resonant modes are observed in the freestanding hybrid tubes and are found to sensitively depend on the structural uniformity. Finally, we demonstrate positioning of freestanding SiO,/Si tubes on a Si substrate by using standard lithographic techniques. (c) 2007 Elsevier B.V. All rights reserved.