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Journal Article

Shape oscillations: A walk through the phase diagram of strained islands

MPS-Authors
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Stoffel,  M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Rastelli,  A.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Merdzhanova,  T.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt,  O. G.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Stoffel, M., Rastelli, A., Stangl, J., Merdzhanova, T., Bauer, G., & Schmidt, O. G. (2007). Shape oscillations: A walk through the phase diagram of strained islands. Physical Review B, 75(11): 113307.


Cite as: https://hdl.handle.net/21.11116/0000-000E-B689-A
Abstract
We observe that the morphology of strained SiGe/Si(001) islands oscillates between shallow and steeper shapes during extensive in situ annealing at the growth temperature. We attribute this result to a competition between coarsening and Si-Ge intermixing as paths to strain relaxation. A simple model, in which the equilibrium island shape depends on volume and the average misfit with the substrate, accounts for the observed behavior. Dislocated islands evolve similarly to coherent islands, with no introduction of additional dislocations throughout the annealing.