SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of 
modified island coarsening

Zhang, J. J.; Stoffel, M.; Rastelli, A.; Schmidt, O. G.; Jovanovic, V.; Nanver, L. K.; Bauer, G.

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SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

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Zhang, J. J.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Stoffel, M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Rastelli, A.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Zitation

Zhang, J. J., Stoffel, M., Rastelli, A., Schmidt, O. G., Jovanovic, V., Nanver, L. K., et al. (2007). SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening. Applied Physics Letters, 91(17): 173115.

Zitierlink: https://hdl.handle.net/21.11116/0000-000E-B685-E

Zusammenfassung

The morphological evolution of both pits and SiGe islands on patterned Si (001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes. (C) 2007 American Institute of Physics.