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Two laterally arranged quantum dot systems with strong capacitive interdot coupling

MPS-Authors
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Hübel,  A.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Weis,  J.
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Dietsche,  W.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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von Klitzing,  K.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Hübel, A., Weis, J., Dietsche, W., & von Klitzing, K. (2007). Two laterally arranged quantum dot systems with strong capacitive interdot coupling. Applied Physics Letters, 91(10): 102101.


Cite as: https://hdl.handle.net/21.11116/0000-000E-B5B2-C
Abstract
A method has been developed to form two quantum dot systems in lateral arrangement in a two-dimensional electron system of a GaAs-AlGaAs heterostructure with strong capacitive interdot coupling. In the authors' design, the interdot capacitance can reach more than one-third of the single-dot capacitance while tunneling between the dots is excluded. This has been achieved by a floating metallic electrode covering both quantum dots, a method already used in split-gate designs before. Here, however, they have reduced the capacitive coupling of this floating gate to other electrodes in the surroundings by an etching technique to obtain a large interdot coupling. (c) 2007 American Institute of Physics.