Magnetic field tuning of hot electron resonant capture in a semiconductor device

Spasov, S.; Allison, G.; Patane, A.; Ignatov, A.; Eaves, L.; Maude, D. K.; Hopkinson, M.; Airey, R.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Magnetic field tuning of hot electron resonant capture in a semiconductor device

MPS-Authors

/persons/resource/persons280292

Maude, D. K.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Spasov, S., Allison, G., Patane, A., Ignatov, A., Eaves, L., Maude, D. K., et al. (2007). Magnetic field tuning of hot electron resonant capture in a semiconductor device. Applied Physics Letters, 91(14): 142104.

Cite as: https://hdl.handle.net/21.11116/0000-000E-B506-F

Abstract

We study hot-electron capture on resonant N-impurities in the dilute nitride Ga(AsN) alloy under high magnetic fields up to 23 T. We show that when the ratio of electric and magnetic fields reaches a critical value, the trajectory of conduction electrons becomes fully localized in real space; this leads to a negative differential conductance and current instabilities tuneable by magnetic field. (C) 2007 American Institute of Physics.