Magnetoresistance of Co-doped ZnO thin films

Stamenov, P.; Venkatesan, M.; Dorneles, L. S.; Maude, D.; Coey, J. M. D.

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Magnetoresistance of Co-doped ZnO thin films

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Maude, D.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Stamenov, P., Venkatesan, M., Dorneles, L. S., Maude, D., & Coey, J. M. D. (2006). Magnetoresistance of Co-doped ZnO thin films. Journal of Applied Physics, 99(8): 08M124.

Cite as: https://hdl.handle.net/21.11116/0000-000E-B46F-B

Abstract

Longitudinal, transverse, and perpendicular magnetoresistances were investigated at temperatures 1.2 < T < 300 K in fields of up to 20 T for four ZnO films: one undoped, two with 4% Co (one paramagnetic, the other exhibiting anhysteretic ferromagnetism at room temperature), and one with 25% Co which exhibits hysteretic ferromagnetism, butterfly magnetoresistance, and presence of Co clusters. The magnetoresistance becomes negligibly small above 50-100 K, and magnetic terms are only evident below 20 K, where the mobility is sufficiently high. Quantum oscillations observed below 2 K in the paramagnetic sample with 4% Co give two different extremal Fermi surface cross sections. The data for dilute ferromagnetic samples are consistent with coherent spin transport in a ferromagnetic matrix; data for the x=25% films suggest that spin-polarized electrons can tunnel coherently between well-separated cobalt clusters. (C) 2006 American Institute of Physics.