Photoluminescence of n-doped double quantum well – electron subbands under 
influence of in-plane magnetic fields

Orlita, M.; Byszewski, M.; Döhler, G. H.; Grill, M.; Hlídek, P.; Malzer, S.; Zvára, M.

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Photoluminescence of n-doped double quantum well – electron subbands under influence of in-plane magnetic fields

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Byszewski, M.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Orlita, M., Byszewski, M., Döhler, G. H., Grill, M., Hlídek, P., Malzer, S., et al. (2006). Photoluminescence of n-doped double quantum well – electron subbands under influence of in-plane magnetic fields. Physica E, 34(1-2), 284-287.

Cite as: https://hdl.handle.net/21.11116/0000-000E-B457-5

Abstract

We report on photoluminescence (PL) measurements of a GaAs/AlGaAs double quantum well (DQW) in high magnetic fields. Measurements were carried out on a selectively contacted symmetric p-delta n-DQW-delta n-p structure, which allows a variation of the electron density in DQW by a p-n bias and simultaneously a tilting of DQW, when a p-p bias is applied. Attention was paid to phenomena in in-plane magnetic fields, theoretically studied by Huang and Lyo (HL), [Phys. Rev. B 59, (1999) 7600]. In this paper, we compare our results for both symmetric and asymmetric DQWs with the theoretical model made by HL. Whereas the spectra from a symmetric DQW fully confirmed the theoretical predictions, the results gained from DQW with an electric-field-induced asymmetry did not allow a proper study of anticipated effects. The reasons for that are discussed. (c) 2006 Elsevier B.V. All rights reserved.