Thermal and photochemical decomposition pathways of AsH3 on GaAs(100): 
Implication for atomic layer epitaxy

Zhu, X.‐Y.; Wolf, Martin; Huett, T.; Nail, J.; Banse, B. A.; Creighton, J. R.; White, J. M.

doi:10.1063/1.106479

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Thermal and photochemical decomposition pathways of AsH₃ on GaAs(100): Implication for atomic layer epitaxy

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Wolf, Martin
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Zhu, X., Wolf, M., Huett, T., Nail, J., Banse, B. A., Creighton, J. R., et al. (1992). Thermal and photochemical decomposition pathways of AsH₃ on GaAs(100): Implication for atomic layer epitaxy. Applied Physics Letters, 60(8), 977-979. doi:10.1063/1.106479.

Cite as: https://hdl.handle.net/21.11116/0000-000E-A86F-9

Abstract

We report spectroscopic evidence for the thermal and photochemical decomposition pathways of arsine (AsH₃) adsorbed on Ga‐rich GaAs(100). Arsine adsorbs molecularly on the Ga‐rich GaAs surface at 120 K and dissociates upon either heating to above 200 K or irradiation with 6.4 eV photons. The dissociation of arsine is accompanied by the formation of surface Ga‐H species, which is both thermally and photochemically more stable than surface AsH_x. This implies that the removal of hydrogen from Ga is the rate‐limiting step in the initial stage of As deposition from AsH₃ in the thermal or photoassisted atomic‐layer epitaxy of GaAs.