Laser‐induced interaction of ammonia with GaAs(100). II. Desorption dynamics

Zhu, X.‐Y.; Wolf, Martin; Huett, T.; White, J. M.

doi:10.1063/1.463746

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Laser‐induced interaction of ammonia with GaAs(100). II. Desorption dynamics

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Wolf, Martin
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Zhu, X., Wolf, M., Huett, T., & White, J. M. (1992). Laser‐induced interaction of ammonia with GaAs(100). II. Desorption dynamics. The Journal of Chemical Physics, 97(8), 5868-5875. doi:10.1063/1.463746.

Cite as: https://hdl.handle.net/21.11116/0000-000E-A6E2-7

Abstract

UV laser irradiation of ammonia adsorbed on GaAs(100) leads to molecular desorption, with a mean translational temperature of (E_trans/2k)=300 K, independent of photon energy and isotope substitution. However, the photodesorption cross section depends strongly on isotope substitution: σ_NH₃/σ_ND₃=4.1 at hν=6.4 eV. This isotope effect is too large to be accounted for by the mass difference in the leaving particles (NH₃ vs ND₃), but can be successfully explained in terms of an isotope effect in the internal N-H(D) coordinates. We take this as evidence for uv‐driven photodesorption from electronically quenched, but vibrationally hot ground state ammonia.