Laser‐induced interaction of ammonia with GaAs(100). I. Dissociation and 
nitridation

Zhu, X.‐Y.; Wolf, Martin; Huett, T.; White, J. M.

doi:10.1063/1.463745

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Laser‐induced interaction of ammonia with GaAs(100). I. Dissociation and nitridation

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Wolf, Martin
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Zhu, X., Wolf, M., Huett, T., & White, J. M. (1992). Laser‐induced interaction of ammonia with GaAs(100). I. Dissociation and nitridation. The Journal of Chemical Physics, 97(8), 5856-5867. doi:10.1063/1.463745.

Cite as: https://hdl.handle.net/21.11116/0000-000E-A851-9

Abstract

UV laser irradiation of ammonia adsorbed on GaAs(100) leads to molecular desorption and dissociation. A nitride passivation layer can be formed on the GaAs surface at 100 K by simultaneous exposure to ammonia and uv photons in a UHV environment. The nitride layer consists of a mixture of Ga and As nitrides. While the dominating GaN surface species is thermally stable, AsN desorbs below 800 K. Surface NH₂ is identified as an intermediate. The implication of this study for selective area passivation and GaN growth is discussed.