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Journal Article

Ultraviolet photochemical nitridation of GaAs

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Wolf,  Martin       
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Zhu, X., Huett, T., Wolf, M., & White, J. M. (1992). Ultraviolet photochemical nitridation of GaAs. Applied Physics Letters, 61(26), 3157-3177. doi:10.1063/1.107950.


Cite as: https://hdl.handle.net/21.11116/0000-000E-44B9-5
Abstract
Monolayer nitridation of Ga‐rich GaAs(100) is achieved at 100 K by simultaneous exposure to ammonia and 6.4 eV photons in a vacuum environment. This process is a result of nonthermal photodissociation of adsorbed ammonia. Surface NH2 is identified as an important intermediate in nitridation.