Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) 
using low-energy electron diffraction and angle resolved ultraviolet 
photoelectron spectroscopy

Riedl, C.; Zakharov, A. A.; Starke, U.

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Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy

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Riedl, C.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;

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Starke, U.
Scientific Facility Interface Analysis (Ulrich Starke), Max Planck Institute for Solid State Research, Max Planck Society;

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Riedl, C., Zakharov, A. A., & Starke, U. (2008). Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy. Applied Physics Letters, 93(3): 033106.

Cite as: https://hdl.handle.net/21.11116/0000-000E-AD4E-9

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