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学術論文

Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor

MPS-Authors
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Kim,  Seo-Jin
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Piva,  Mario M.
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Schmidt,  Marcus
Marcus Schmidt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Fartab,  Dorsa
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Mackenzie,  Andrew P.
Andrew Mackenzie, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Baenitz,  Michael
Michael Baenitz, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Nicklas,  Michael
Michael Nicklas, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Rosner,  Helge
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Cook,  Ashley M.
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Zhang,  Haijing
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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引用

Kim, S.-J., Zhu, J., Piva, M. M., Schmidt, M., Fartab, D., Mackenzie, A. P., Baenitz, M., Nicklas, M., Rosner, H., Cook, A. M., González-Hernández, R., Šmejkal, L., & Zhang, H. (2023). Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor. Advanced Science, pp. 1-8. doi:10.1002/advs.202307306.


引用: https://hdl.handle.net/21.11116/0000-000E-2C09-8
要旨
Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time-reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes can be provided by recent discoveries of a time-reversal symmetry breaking anomalous Hall effect (AHE) in noncollinear magnets and altermagnets, but hitherto reported bulk materials are not polar. Here, the authors report the observation of a spontaneous AHE in doped AgCrSe2, a layered polar semiconductor with an antiferromagnetic coupling between Cr spins in adjacent layers. The anomalous Hall resistivity 3 (Formula presented.) is comparable to the largest observed in compensated magnetic systems to date, and is rapidly switched off when the angle of an applied magnetic field is rotated to ≈80° from the crystalline c-axis. The ionic gating experiments show that the anomalous Hall conductivity magnitude can be enhanced by modulating the p-type carrier density. They also present theoretical results that suggest the AHE is driven by Berry curvature due to noncollinear antiferromagnetic correlations among Cr spins, which are consistent with the previously suggested magnetic ordering in AgCrSe2. The results open the possibility to study the interplay of magnetic and ferroelectric-like responses in this fascinating class of materials. © 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.