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Journal Article

Low-Temperature Sputtered Ultralow-Loss Silicon Nitride for Hybrid Photonic Integration

MPS-Authors
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Zhang,  Shuangyou
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Bi,  Toby
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Friedrich-Alexander-Universität Erlangen-Nürnberg, External Organizations;

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Harder,  Irina
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Ohletz,  Olga
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Gannott,  Florentina
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Gumann,  Alexander
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Butzen,  Eduard
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Zhang,  Yaojing
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Del'Haye,  Pascal
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Zhang, S., Bi, T., Harder, I., Ohletz, O., Gannott, F., Gumann, A., et al. (2023). Low-Temperature Sputtered Ultralow-Loss Silicon Nitride for Hybrid Photonic Integration. Laser & Photonics Review. doi:10.1002/lpor.202300642.


Cite as: https://hdl.handle.net/21.11116/0000-000E-A9B5-7
Abstract
Silicon-nitride-on-insulator (Si3N4) photonic circuits have seen tremendous advances in many applications, such as on-chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low pressure chemical vapor deposition (LPCVD) and high-temperature annealing (1200°C). However, high processing temperatures pose challenges to the cointegration of Si3N4 with pre-processed silicon electronic and photonic devices, lithium niobate on insulator (LNOI), and Ge-on-Si photodiodes. This limits LPCVD as a front-end-of-line process. Here, ultralow-loss Si3N4 photonics based on room-temperature reactive sputtering is demonstrated. Propagation losses as low as 5.4 dB m−1 after 400°C annealing and 3.5 dB m−1 after 800°C annealing are achieved, enabling ring resonators with highest optical quality factors of > 10 million and an average quality factor of 7.5 million. To the best of the knowledge, these are the lowest propagation losses achieved with low temperature Si3N4. This ultralow loss enables the generation of microresonator soliton frequency combs with threshold powers of 1.1 mW. The introduced sputtering process offers full complementary metal oxide semiconductor (CMOS) compatibility with front-end silicon electronics and photonics. This could enable hybrid 3D integration of low loss waveguides with integrated lasers and lithium niobate on insulator.