Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 
van der Waals heterostructures

Pan, Haiyang; Singh, Anil Kumar; Zhang, Chusheng; Hu, Xueqi; Shi, Jiayu; An, Liheng; Wang, Naizhou; Duan, Ruihuan; Liu, Zheng; Parkin, Stuart S. P.; Deb, Pritam; Gao, Weibo

doi:10.1002/inf2.12504

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Room-temperature tunable tunneling magnetoresistance in Fe₃GaTe₂/WSe₂/Fe₃GaTe₂ van der Waals heterostructures

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Parkin, Stuart S. P.
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Citation

Pan, H., Singh, A. K., Zhang, C., Hu, X., Shi, J., An, L., et al. (2024). Room-temperature tunable tunneling magnetoresistance in Fe₃GaTe₂/WSe₂/Fe₃GaTe₂ van der Waals heterostructures. InfoMat: novel materials for next-generation information system, 6(6): e12504. doi:10.1002/inf2.12504.

Cite as: https://hdl.handle.net/21.11116/0000-000F-13C7-B

Abstract

The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high working temperature and adjustable functionalities holds great potential for advancing the application of 2D materials in magnetic sensing and data storage. Here, we report the observation of highly tunable room-temperature tunneling magnetoresistance through electronic means in a full vdW Fe₃GaTe₂/WSe₂/Fe₃GaTe₂ MTJ. The spin valve effect of the MTJ can be detected even with the current below 1 nA, both at low and room temperatures, yielding a tunneling magnetoresistance (TMR) of 340% at 2 K and 50% at 300 K, respectively. Importantly, the magnitude and sign of TMR can be modulated by a DC bias current, even at room temperature, a capability that was previously unrealized in full vdW MTJs. This tunable TMR arises from the contribution of energy-dependent localized spin states in the metallic ferromagnet Fe₃GaTe₂ during tunnel transport when a finite electrical bias is applied. Our work offers a new perspective for designing and exploring room-temperature tunable spintronic devices based on vdW magnet heterostructures.