Photodoping-Modified Charge Density Wave Phase Transition in WS2/1T-TaS2 
Heterostructure

Wang, Rui; Ding, Jianwei; Sun, Fei; Zhao, Jimin; Qiu, Xiaohui

doi:10.1088/0256-307X/41/5/057801

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Photodoping-Modified Charge Density Wave Phase Transition in WS₂/1T-TaS₂ Heterostructure

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Sun, Fei
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Wang, R., Ding, J., Sun, F., Zhao, J., & Qiu, X. (2024). Photodoping-Modified Charge Density Wave Phase Transition in WS₂/1T-TaS₂ Heterostructure. Chinese physics letters, 41(5): 057801, pp. 1-6. doi:10.1088/0256-307X/41/5/057801.

Cite as: https://hdl.handle.net/21.11116/0000-000F-6895-4

Abstract

Controlling collective electronic states hold great promise for development of innovative devices. Here, we experimentally detect the modification of the charge density wave (CDW) phase transition within a 1T-TaS2 layer in a WS2/1T-TaS2 heterostructure using time-resolved ultrafast spectroscopy. Laser-induced charge transfer doping strongly suppresses the commensurate CDW phase, which results in a significant decrease in both the phase transition temperature (T c) and phase transition stiffness. We interpret the phenomenon that photo-induced hole doping, when surpassing a critical threshold value of ∼ 1018 cm−3, sharply decreases the phase transition energy barrier. Our results provide new insights into controlling the CDW phase transition, paving the way for optical-controlled novel devices based on CDW materials. © 2024 Chinese Physical Society and IOP Publishing Ltd.