Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse

Datensatz

DATENSATZ AKTIONENEXPORT

Freigegeben

Zeitschriftenartikel

Emerging Two-Dimensional Conductivity at the Interface between Mott and Band Insulators

MPG-Autoren
/persons/resource/persons260094

Ernst,  A.       
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

Externe Ressourcen
Volltexte (beschränkter Zugriff)
Für Ihren IP-Bereich sind aktuell keine Volltexte freigegeben.
Volltexte (frei zugänglich)

2401.16813v1.pdf
(Preprint), 2MB

Ergänzendes Material (frei zugänglich)
Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar
Zitation

Maznichenko, I., Ostanin, S., Maryenko, D., Dugaev, V., Sherman, E., Buczek, P., et al. (2024). Emerging Two-Dimensional Conductivity at the Interface between Mott and Band Insulators. Physical Review Letters, 132(21): 216201. doi:10.1103/PhysRevLett.132.216201.


Zitierlink: https://hdl.handle.net/21.11116/0000-000F-7604-8
Zusammenfassung
Intriguingly, conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here, we address the (001), (110), and (111) interfaces between the LaTiO3 Mott, and large band gap KTaO3 insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wideband insulators. Here, the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO3 and LaTiO3 which, due to a small gap in the LaTiO3 results in its sensitivity to the crystal structure, yields metallization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO3/KTaO3 (110) where the “polar” arguments are not applicable and on the emergence of superconductivity in these structures.