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Impact of Hierarchical Dopant-Induced Microstructure on Thermoelectric Properties of p-Type Si–Ge Alloys Revealed by Comprehensive Multi-Scale Characterization

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Vega-Paredes,  Miguel
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max Planck Institute for Sustainable Materials, Max Planck Society;

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Kim,  Se-Ho
Department of Materials Science and Engineering, Korea University, Seoul, 02841 Republic of Korea;
Hydrogen in Energy Materials, Project Groups, Microstructure Physics and Alloy Design, Max Planck Institute for Sustainable Materials, Max Planck Society;

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Jung,  Chanwon
Department of Materials Science and Engineering, Pukyong National University, Busan, 48513 Republic of Korea;
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max Planck Institute for Sustainable Materials, Max Planck Society;

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Scheu,  Christina
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max Planck Institute for Sustainable Materials, Max Planck Society;

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Citation

Jang, K., Ko, W.-S., Son, J.-H., Jang, J.-I., Kim, B., Vega-Paredes, M., et al. (2024). Impact of Hierarchical Dopant-Induced Microstructure on Thermoelectric Properties of p-Type Si–Ge Alloys Revealed by Comprehensive Multi-Scale Characterization. Advanced Functional Materials, 34(40): 2403785. doi:10.1002/adfm.202403785.


Cite as: https://hdl.handle.net/21.11116/0000-000F-B89C-2
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