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Initialization-Free and Magnetic Field-Free Spin–Orbit p-Bits with Backhopping-like Magnetization Switching for Probabilistic Applications

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Guan,  Yicheng       
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Parkin,  Stuart       
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Citation

Ren, R., Cao, Y., Wang, C., Guan, Y., Liu, S., Wang, L., et al. (2024). Initialization-Free and Magnetic Field-Free Spin–Orbit p-Bits with Backhopping-like Magnetization Switching for Probabilistic Applications. Nano Letters, 24(33), 10072-10080. doi:10.1021/acs.nanolett.4c01989.


Cite as: https://hdl.handle.net/21.11116/0000-000F-C7F0-1
Abstract
Probabilistic bits (p-bits) with thermal- and spin torque-induced nondeterministic magnetization switching are promising candidates for performing probabilistic computing. Previously reported spin torque p-bits include volatile low-energy barrier nanomagnets (LBNMs) with spontaneously fluctuating magnetizations and initialization-necessary nonvolatile magnets. However, initialization-free nonvolatile spin torque p-bits are still lacking. Here, we demonstrate moderately thermal stable spin–orbit torque (SOT) p-bits with non-consecutively deposited Pt//Pt/Co/Pt stacks. Backhopping-like (BH) magnetization switching with a wide range current-tunable probability of final up and down magnetization states from 0% to 100% was achieved, regardless of the initial magnetization state, which was attributed to the interplay of SOT and thermal contributions. Integer factorization using such BH-SOT p-bits in zero magnetic field was demonstrated at times that are significantly shorter than those of existing nonvolatile STT or volatile LBNMs p-bits. Our realization of initialization-free and magnetic field-free moderately thermally stable BH-SOT p-bits opens up a new perspective for probabilistic spintronic applications.