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Conference Paper

Broadband, Efficient, and Low Dark Current SiN-on-SOI Waveguide-Coupled Photodetectors for Visible Light

MPS-Authors
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Govdeli,  Alperen
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons301806

Suriya,  Abhishek
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons257612

Poon,  Joyce K. S.       
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons258003

Sacher,  Wesley D.       
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource

https://doi.org/10.1364/OFC.2024.W2A.37
(Publisher version)

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Citation

Govdeli, A., Mikkelsen, J. C., Suriya, A., Chua, H., Lo, G.-Q., Poon, J. K. S., et al. (2024). Broadband, Efficient, and Low Dark Current SiN-on-SOI Waveguide-Coupled Photodetectors for Visible Light. In Optical Fiber Communications Conference and Exhibition, OFC 2024.


Cite as: https://hdl.handle.net/21.11116/0000-000F-D8A8-0
Abstract
We demonstrate foundry-fabricated waveguide-coupled photodetectors wherein silicon nitride waveguides pass overtop doped silicon-on-insulator patches. At a 5V reverse bias, dark currents < 8pA, and red, green, and blue-wavelength external quantum efficiencies >70% were measured.