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Controlling 4 f antiferromagnetic dynamics via itinerant electronic susceptibility

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Lee,  Sang-Eun       
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Windsor,  Yoav William       
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Zahn,  Daniela       
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Rettig,  Laurenz       
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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PhysRevResearch.6.043019.pdf
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Citation

Lee, S.-E., Windsor, Y. W., Zahn, D., Kraiker, A., Kummer, K., Kliemt, K., et al. (2024). Controlling 4 f antiferromagnetic dynamics via itinerant electronic susceptibility. Physical Review Research, 6(4): 043019. doi:10.1103/PhysRevResearch.6.043019.


Cite as: https://hdl.handle.net/21.11116/0000-000F-F835-E
Abstract
Optical manipulation of magnetism holds promise for future ultrafast spintronics, especially with lanthanides and their huge, localized 4f magnetic moments. These 4f moments interact indirectly by spin polarizing the conduction electrons (the Ruderman-Kittel-Kasuya-Yosida exchange interaction), influenced by interatomic orbital overlap, and the conduction electron's susceptibility around the Fermi level. Here, we study this influence in a series of 4f antiferromagnets, GdT2Si2 (T = Co, Rh, Ir), using ultrafast resonant x-ray diffraction. We observe a twofold increase in the ultrafast intersublattice angular momentum transfer rate between the materials, originating from modifications in the conduction electron susceptibility, as confirmed by first-principles calculations.