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Integrated optical switches based on Kerr symmetry breaking in microresonators

MPS-Authors
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Zhang,  Yaojing
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Zhang,  Shuangyou
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Ghosh,  Alekhya
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Pal,  Arghadeep
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Ghalanos,  George N.
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Bi,  Toby
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Yan,  Haochen
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Zhang,  Hao
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Hill,  Lewis
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Del'Haye,  Pascal
Del'Haye Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Friedrich-Alexander-Universität Erlangen-Nürnberg, External Organizations;

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prj-13-2-360.pdf
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Citation

Zhang, Y., Zhang, S., Ghosh, A., Pal, A., Ghalanos, G. N., Bi, T., et al. (2025). Integrated optical switches based on Kerr symmetry breaking in microresonators. Photonics Research, 13, 360-366. doi:10.1364/PRJ.542111.


Cite as: https://hdl.handle.net/21.11116/0000-0010-7BD3-6
Abstract
With the rapid development of the Internet of Things and big data, integrated optical switches are gaining prominence for applications in on-chip optical computing, optical memories, and optical communications. Here, we propose a novel approach for on-chip optical switches by utilizing the nonlinear optical Kerr effect induced spontaneous symmetry breaking (SSB), which leads to two distinct states of counterpropagating light in ring resonators. This technique is based on our first experimental observation of on-chip symmetry breaking in a high-Q (9.4 × 106) silicon nitride resonator with a measured SSB threshold power of approximately 3.9 mW. We further explore the influence of varying pump powers and frequency detunings on the performance of SSB-induced optical switches. Our work provides insights into the development of new types of photonic data processing devices and provides an innovative approach for the future implementation of on-chip optical memories.