English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Semiconductor moiré materials

MPS-Authors
There are no MPG-Authors in the publication available
External Resource
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Mak, K. F., & Shan, J. (2022). Semiconductor moiré materials. Nature Nanotechnology, 17(7), 686-695. doi:10.1038/s41565-022-01165-6.


Cite as: https://hdl.handle.net/21.11116/0000-0010-7DC0-9
Abstract
Moiré materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moiré materials, with a particular focus on transition metal dichalcogenides. Following a brief overview of the general features in this class of materials, we discuss recent theoretical and experimental studies on Hubbard physics, Kane–Mele–Hubbard physics and equilibrium moiré excitons. We also comment on the future opportunities and challenges in the studies of transition metal dichalcogenide and other semiconductor moiré materials.