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Novel spin Hall effect materials and artificially engineered magnetic thin film heterostructures for energy-efficient spintronic memories

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Wang,  Peng
International Max Planck Research School for Science and Technology of Nano-Systems, Max Planck Institute of Microstructure Physics, Max Planck Society;
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Citation

Wang, P. (2022). Novel spin Hall effect materials and artificially engineered magnetic thin film heterostructures for energy-efficient spintronic memories. PhD Thesis, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale).


Cite as: https://hdl.handle.net/21.11116/0000-0010-7FD9-C
Abstract
The discovery of novel materials with superior properties is a key factor to promote the progress of highly energy-efficient spintronic memories, which are urgently needed to satisfy the increasing demand for data storage. Of special interest are new materials that convert charge current into spin currents with high efficiency. These could impact two distinct classes of spintronic memories, namely magnetoresistive random-access memories, that are already in mass production, and racetrack memories that have great potential for high density and high performance, non-volatile memory-storage devices. For the latter chiral non-collinear spin textures such as domain walls and skyrmions are the basic storage elements. I will introduce our work about energy efficient racetrack memories and our findings about magnetic bubbles and Néel skyrmions in intermetallic thin films.