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Journal Article

Quasiparticle Transformation during a Metal-Insulator Transition in Graphene

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Horn,  Karsten
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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433730.pdf
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0904.2249v1.pdf
(Preprint), 384KB

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Citation

Bostwick, A., McChesney, J. L., Emtsev, K. V., Seyller, T., Horn, K., Kevan, S. D., et al. (2009). Quasiparticle Transformation during a Metal-Insulator Transition in Graphene. Physical Review Letters, 103(5), 056404-1-056404-4. doi:10.1103/PhysRevLett.103.056404.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-F880-8
Abstract
Here we show, with simultaneous transport and photoemission measurements, that the grapheneterminated SiC(0001) surface undergoes a metal-insulator transition upon dosing with small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermiliquid behavior and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.