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Journal Article

Change of InAs/GaAs quantum dot shape and composition during capping

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Temko,  Yevgeniy
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Suzuki,  Takayuki
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Eisele, H., Lenz, A., Heitz, R., Timm, R., Dähne, M., Temko, Y., et al. (2008). Change of InAs/GaAs quantum dot shape and composition during capping. Journal of Applied Physics, 104(12), 124301–1-124301–5. doi:10.1063/1.3042216.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-FB50-9
Abstract
Using plan-view and cross-sectional scanning tunneling microscopy, the shape and composition of InAs/GaAs quantum dots are investigated before and after capping by GaAs. During capping, the original pyramidally shaped quantum dots become truncated, resulting in a flat (001) top facet and steeper side facets. The InAs quantum dots are found to be intermixed at their top with GaAs due to material rearrangement. Since the bottom interface of quantum dots and wetting layer is always sharp, this intermixing occurs during capping and not during quantum dot growth. Considering strain energies, a model for the capping is presented.