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Electronic states in arsenic-decapped MnAs (1(1)over-bar00) films grown on GaAs(001): A photoemission spectroscopy study

MPS-Authors
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Kumar,  A.
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Tallarida,  M.
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Horn,  Karsten
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Fulltext (public)

APL decapping final.pdf
(Preprint), 364KB

Supplementary Material (public)
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Citation

Moreno, M., Kumar, A., Tallarida, M., Horn, K., Ney, A., & Ploog, K. H. (2008). Electronic states in arsenic-decapped MnAs (1(1)over-bar00) films grown on GaAs(001): A photoemission spectroscopy study. Applied Physics Letters, 92, 084103-1-084103-3. doi:10.1063/1.2888953.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-FD7C-8
Abstract
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