Photoemission studies of graphene on SiC: growth, interface, and electronic 
structure

Bostwick, Aaron; Emtsev, K. V.; Horn, Karsten; Huwald, E.; Ley, L.; McChesney, Jessica L.; Ohta, Taisuke; Riley, J.; Rotenberg, Eli; Speck, F.; Seyller, Thomas

doi:10.1007/978-3-540-74325-5_13

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Photoemission studies of graphene on SiC: growth, interface, and electronic structure

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Horn, Karsten
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Ohta, Taisuke
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Bostwick, A., Emtsev, K. V., Horn, K., Huwald, E., Ley, L., McChesney, J. L., et al. (2008). Photoemission studies of graphene on SiC: growth, interface, and electronic structure. Advances in Solid State Physics, 47, 159-170. doi:10.1007/978-3-540-74325-5_13.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-FDE3-D

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