Photoemission studies of graphene on SiC: growth, interface, and electronic 
structure

Bostwick, Aaron; Emtsev, K. V.; Horn, Karsten; Huwald, E.; Ley, L.; McChesney, Jessica L.; Ohta, Taisuke; Riley, J.; Rotenberg, Eli; Speck, F.; Seyller, Thomas

doi:10.1007/978-3-540-74325-5_13

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsStatisticsRelease HistoryDetailsSummary

Released

Journal Article

Photoemission studies of graphene on SiC: growth, interface, and electronic structure

MPS-Authors

/persons/resource/persons21640

Horn, Karsten
Molecular Physics, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21924

Ohta, Taisuke
Molecular Physics, Fritz Haber Institute, Max Planck Society;

External Ressource

No external resources are shared

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Bostwick, A., Emtsev, K. V., Horn, K., Huwald, E., Ley, L., McChesney, J. L., et al. (2008). Photoemission studies of graphene on SiC: growth, interface, and electronic structure. Advances in Solid State Physics, 47, 159-170. doi:10.1007/978-3-540-74325-5_13.

Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-FDE3-D

Abstract

There is no abstract available