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Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases

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Scheffler,  Matthias
Theory, Fritz Haber Institute, Max Planck Society;

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Citation

Buecking, N., Butscher, S., Richter, M., Weber, C., Declair, S., Woerner, M., et al. (2008). Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases. In Proceedings of SPIE.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-FE54-7
Abstract
A theory of electron relaxation for electron gases in semiconductor quantum well structures and at semiconductor surfaces is presented. The electron relaxation is described by quantum-kinetic equations. In the nonlinear optical response of a two dimensional electron gas in a GaN quantum well, polaronic signatures are clearly enhanced compared to the linear response, if the pump pulse is tuned to the polaron energy. For the phonon-induced electron relaxation at Si (001) surface structures, the interplay of bulk and surface states yields a complex temporal relaxation dynamics depending on the slab thickness.