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Argon Physisorption as Structural Probe for Endohedrally Doped Silicon Clusters

MPS-Authors
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Grüne,  Philipp
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Meijer,  Gerard
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Fielicke,  André
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Citation

Janssens, E., Grüne, P., Meijer, G., Wöste, L., Lievens, P., & Fielicke, A. (2007). Argon Physisorption as Structural Probe for Endohedrally Doped Silicon Clusters. Physical Review Letters, 99(6): 063401. doi:10.1103/PhysRevLett.99.063401.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0011-000D-B
Abstract
We report on an element-dependent critical size for argon physisorption at 80 K on transition-metal-doped silicon clusters. Argon does not attach to elemental silicon clusters but only to surface-located transition-metal atoms. Thus physisorption provides structural information. Specifically, the minimal cluster size for the formation of endohedral singly metal-doped silicon cages has been determined. The observed critical size for doubly doped silicon clusters indicates that larger caged molecules can be formed, eventually leading to the growth of metal-doped silicon nanorods.